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MMBT3906
MMBT3906 PNP
Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung
2.9 0.1 0.4 3 1.30.1 1.1
PNP
250 mW SOT-23 (TO-236) 0.01 g
Version 2006-10-17 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 1.9 2
Dimensions - Mae [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS
2.5 max
Grenzwerte (TA = 25C) MMBT3906 40 V 40 V 5V 250 mW 1) 200 mA -55...+150C -55...+150C
Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis )
2
Kennwerte (Tj = 25C) Typ. - - - - - - - -
-4
Max. - - 300 - - 400 12 k 60 S 10*10-4
-
IC IC IC IC IC
= = = = =
0.1 mA, - VCE 1 mA, - VCE 10 mA, - VCE 50 mA, - VCE 100 mA, - VCE
= = = = =
1 1 1 1 1
V V V V V
hFE hFE hFE hFE hFE hfe hie hoe hre
40 80 100 60 30 100 2 k 3 S 0.1*10
h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz Small signal current gain - Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage transfer ratio - Spannungsruckwirkung
-
1 2
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/
(c) Diotec Semiconductor AG
1
MMBT3906 Characteristics (Tj = 25C) Min. Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 30 V, - VEB = 3 V Emitter-Base cutoff current - Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product - Transitfrequenz - IC = 10 mA, - VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 100 A, RG = 1 k, f = 1 kHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time - VCC = 3 V, - VBE = 0.5 V - IC = 10 mA, - IB1 = 1mA - VCC = 3 V, - IC = 10 mA, - IB1 = IB2 = 1 mA td tr ts tf RthA - - - - - - - - < 200 K/W 1) MMBT3904 MMBT3906 = 2A 35 ns 35 ns 225 ns 75 ns F - - 4 dB CEBO - - 10 pf CCBO - - 4.5 pF fT 250 MHz - - IEBV - -50 nA - ICEX - - 50 nA - VBEsat - VBEsat 0.65 V - - - 0.85 V 0.95 V - VCEsat - VCEsat - - - - 0.25 V 0.4 V Kennwerte (Tj = 25C) Typ. Max.
Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung
2 1
Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2

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